Sony Computer Entertainment Inc. (SCEI) announced today that it
would be the first in the industry to start advanced semiconductor production with 90
nanometer embedded DRAM process in FY2003. With the installation of this advanced
semiconductor technology, SCEI will integrate the company’s two main semiconductors,
EmotionEngine and Graphics Synthesizer, CPU and graphics processor used for
PlayStation 2, into one chip.
This new ultra highly-integrated semiconductor will have a total of 53.5 million
transistors with enhanced low power-consumption and at a reduced cost. Mass production
with 90 nanometer embedded DRAM process leads ITRS, the industry standard roadmap of
semiconductor technologies, and comes six months ahead of others in the industry.
Production of the new semiconductor will start from this spring in Oita TS Semiconductor
(OTSS), a joint venture between SCEI and Toshiba Corporation, and in the fall in Fab,
SCEI’s own semiconductor fabrication facility in Isahaya City, Nagasaki Prefecture.
Since 1999, SCEI’s Fab and OTSS have jointly invested approximately 300
billion yen. Starting with 180 nanometer process, further enhancements have been made at
both facilities, with the introduction of 90 nanometer process fabrication line currently taking
place. The world’s highest productivity with 180 – 140 nanometer embedded DRAM process
and logic process is achieved in their respective facilities and the introduction of mass
production with 90 nanometer embedded DRAM process further accelerates the company’s
endeavor to achieve the very highest standards in semiconductor fabrication.
With PlayStation and PlayStation 2, Sony Computer Entertainment will create
and develop a new world of computer entertainment for the broadband era through the fusion
of game, music, movies, and broadcasting.
New Semiconductor Specification
EE: 128bit RISC
GS: Parallel rendering processor with embedded DRAM
Process: 90 nanometer
Total number of transistors: 53.5 MTr.
Embedded DRAM: 4MB
Memory size: 0.19µm2
Clock frequency: 294.912MHz
Power consumption: 8Watts
(initial power consumption was 37Watts two chips total)
Metal layer: 5
Die size: 86mm2
(initial die size was 413 mm2 two chips total)
Package: 536pin EBGA